{"product_id":"research-on-chemical-mechanical-polishing-mechanism-of-novel-diffusion-barrier-ru-for-cu-interconnect-springer-theses","title":"Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect (Springer Theses)","description":"\u003cp\u003e\u003cstrong\u003eBook info:\u003c\/strong\u003e Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect (Springer Theses) (Hardcover, 155 pages) – Springer, 2017. Language: English.\u003c\/p\u003e\n \u003cp\u003eThis thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu\/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.\u003c\/p\u003e  \n\n                                         Editorial Reviews                   From the Back Cover   \u003cp\u003eThis thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu\/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.\u003c\/p\u003e\u003cp\u003e\u003c\/p\u003e                                           ","brand":"Jie Cheng","offers":[{"title":"Default Title","offer_id":46069466300650,"sku":"9789811061646","price":61.32,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0714\/5301\/6298\/files\/61GNu7k20oL._SL1500.jpg?v=1781208902","url":"https:\/\/textbookme.store\/products\/research-on-chemical-mechanical-polishing-mechanism-of-novel-diffusion-barrier-ru-for-cu-interconnect-springer-theses","provider":"TextbookMe","version":"1.0","type":"link"}